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December 2013
IRL640A
N-Channel Logic Level A-FET
200 V, 18 A, 180 m ?
Description
Features
These N-Channel enhancement mode power field
effect transistors are produced using Fairchild’s
proprietary, planar, DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switching DC/DC
converters, switch mode power supplies, DC-AC
converters for uninterrupted power supply and motor
control.
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18 A, 200 V, R DS(on) = 180 m ? @ V GS = 5 V
Low G ate C harge ( Typ. 40 nC)
Low Crss ( Typ. 95 pF)
Fast S witching
100% A valanche T ested
Improved dv/dt C apability
Logic-Level Gate Drive
D
D
G
S
TO-220
G
Absolute Maximum Ratings
S
Symbol
V DSS
I D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T C =25 ° C)
Continuous Drain Current (T C =100 ° C)
Value
200
18
11.4
Units
V
A
I DM
V GS
E AS
I AR
E AR
dv/dt
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(1)
(2)
(1)
(1)
(3)
63
± 20
64
18
11
5
A
V
mJ
A
mJ
V/ns
P D
T J , T STG
T L
Total Power Dissipation (T C =25 ° C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
110
0.88
- 55 to +150
300
W
W/ ° C
° C
Thermal Resistance
Symbol
R θ JC
R θ CS
R θ JA
?1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
1
Typ.
--
0.5
--
Max.
1.14
--
62.5
Units
° C/W
www.fairchildsemi.com
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